Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373484
Reference35 articles.
1. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
2. High-purity InP grown by gas source molecular beam epitaxy (GSMBE)
3. Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
4. Chemical beam epitaxy of indium phosphide
5. Growth of high purity InP by metalorganic MBE (CBE)
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