Carrier Transport in High-mobility MOSFETs
Author:
Publisher
John Wiley & Sons Singapore Pte. Ltd
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781118871737.ch5/fullpdf
Reference68 articles.
1. III-V/Ge channel MOS device technologies in nano CMOS era;Takagi;Japanese Journal of Applied Physics,2015
2. Comparative study on drive current of III-V semiconductor, Ge and Si channel n-MOSFETs based on quantum-corrected Monte Carlo simulation;Mori;IEEE Transactions on Nanotechnology,2008
3. Drive current of ultrathin Ge-on-insulator n-channel MOSFETs;Azuma;Physica Status Solidi (c),2008
4. Role of carrier transport in source and drain electrodes of high-mobility MOSFETs;Tsuchiya;IEEE Electron Device Letters,2010
5. Influence of source/drain resistance on device performance of ultrathin body III-V chhannel metal-oxide-semiconductor field-effect transistors;Maegawa;Applied Physics Express,2011
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