High-purity InP grown by gas source molecular beam epitaxy (GSMBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
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5. Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy
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1. High electron mobility InP grown by solid source molecular beam epitaxy;Materials Science in Semiconductor Processing;2020-06
2. Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Applied Physics;2000-06
3. Mechanisms in embedded selective epitaxy and overgrowth of an integrated laser/modulator quantum well structure using MOMBE and MOVPE;MRS Proceedings;2000
4. Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Crystal Growth;1999-07
5. Chemical beam epitaxial growth of inp using EDMIn and BPE;Journal of Electronic Materials;1997-04
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