Characterization of silicon-doped InP grown by solid-source molecular beam epitaxy using a valved phosphorus cracker cell
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
2. High-purity InP grown by gas source molecular beam epitaxy (GSMBE)
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4. Chemical beam epitaxy of indium phosphide
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4. Prospects of photo-sensitive indium phosphide based top-mounted and flip-chip IMPATT oscillators for application in terahertz regime;International Journal of Electronics;2011-04
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