Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98859
Reference17 articles.
1. High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE
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3. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
4. Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells
5. Chemical beam epitaxy of InP and GaAs
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