High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE-Reference-Cited by-同舟云学术

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High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE

Published:1986-09 Issue:1-3 Volume:77 Page:579-590
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nelson A.W.,Cole S.,Wong S.,Harlow M.J.,Devlin W.J.,Wake D.,Rodgers P.M.,Robertson M.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD

2. Double heterostructure and multiquantum-well lasers at 1.5–1.7 μm grown by atmospheric pressure MOVPE

3. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Carey,1986

4. Ga1-xinxas - inp abrupt heterostructures grown by MOVPE at atmospheric pressure

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2. Devices;Organometallic Vapor-Phase Epitaxy;1999

3. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999

4. Methods to improve the P/As compositional uniformity of InGaAsP thin films prepared by MOCVD;Journal of Crystal Growth;1996-10

5. 1.3 ?m planar buried heterostructure distributed feedback lasers grown by four-step MOVPE;Optical and Quantum Electronics;1995-05

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