The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
2. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
3. Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocations
4. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
5. Proc. 2nd Intern. Symp. on Si-MBE;Tuppen,1988
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