Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures-Reference-Cited by-同舟云学术

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

Published:2016-03 Issue:2 Volume:34 Page:02L113
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Maros Aymeric,Faleev Nikolai,King Richard R.,Honsberg Christiana B.,Convey Diana¹,Xie Hongen,Ponce Fernando A.

Affiliation:

1. LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287

Funder

National Science Foundation (NSF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://scitation.aip.org/deliver/fulltext/avs/journal/jvstb/34/2/1.4942897.pdf?itemId=/content/avs/journal/jvstb/34/2/10.1116/1.4942897&mimeType=pdf&containerItemId=content/avs/journal/jvstb

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