Semiconductor defects at the interface
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. SiC Materials and Devices;Park,1998
2. Intrinsic SiC/SiO2 Interface States
3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
4. Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces
5. Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC
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2. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19
3. Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation;Japanese Journal of Applied Physics;2021-02-12
4. Passivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study;Chinese Physics B;2018-04
5. Exact evaluation of interface-reaction-limited growth in dry and wet thermal oxidation of 4H-SiC(0001) Si-face surfaces;Japanese Journal of Applied Physics;2015-08-10
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