Passivation of carbon dimer defects in amorphous SiO 2 /4H–SiC (0001) interface: A first-principles study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/27/4/047103/pdf
Reference41 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Wide bandgap semiconductor materials and devices
3. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
4. Nanoscale transport properties at silicon carbide interfaces
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