Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry
Reference48 articles.
1. Step-controlled epitaxial growth of SiC: high quality homoepitaxy;Matsunami;Mater. Sci. Eng. R Rep.,1997
2. Present status and future prospect of widegap semiconductor high-power devices;Okumura;Jpn. J. Appl. Phys.,2006
3. Material science and device physics in SiC technology for high-voltage power devices;Kimoto;Jpn. J. Appl. Phys.,2015
4. Silicon carbide: a unique platform for metal-oxide-semiconductor physics;Liu;Appl. Phys. Rev.,2015
5. First-principles study on interlayer states at the 4H-SiC/SiO2 interface and the effect of oxygen-related defects;Kirkham;J. Phys. Soc. Jpn.,2016
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