First-Principles Study on Interlayer States at the 4H-SiC/SiO2Interface and the Effect of Oxygen-Related Defects
Author:
Affiliation:
1. Center for Computational Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan
2. JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.7566/JPSJ.85.024701
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer;Japanese Journal of Applied Physics;2024-01-24
2. Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps;Applied Physics Express;2024-01-01
3. Density functional theory calculation for carrier scattering at 4H-SiC(0001)/SiO2 interface;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
4. The effect of biaxial strain on the phonon-limited mobility in 4H-SiC MOSFETs;Applied Physics Express;2023-08-01
5. Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing;Solid State Phenomena;2023-07-28
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