Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Enhancement of oxygen precipitation in quenched Czochralski silicon crystals
2. On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing
3. Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers
4. FTIR spectroscopic system with improved sensitivity
5. Interaction of oxygen with thermally induced vacancies in Czochralski silicon
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2. Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation;Journal of Applied Physics;2018-04-28
3. Oxygen defect processes in silicon and silicon germanium;Applied Physics Reviews;2015-06
4. Vacancy-oxygen defects in silicon: the impact of isovalent doping;Journal of Materials Science: Materials in Electronics;2014-04-26
5. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer;Acta Physica Sinica;2012
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