Enhancement of oxygen precipitation in quenched Czochralski silicon crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344030
Reference12 articles.
1. Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
2. The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon
3. The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystals
4. The influence of thermal point defects on the precipitation of oxygen in dislocation‐free silicon crystals
5. Redissolution of precipitated oxygen in Czochralski‐grown silicon wafers
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1. Formation of vacancy and oxygen containing complexes in Cz-Si by rapid thermal annealing;Physica B: Condensed Matter;2009-12
2. Interaction of oxygen with thermally induced vacancies in Czochralski silicon;Applied Physics Letters;2009-03-02
3. Intrinsic gettering Based on rapid thermal annealing in germanium-doped Czochralski silicon;Journal of Applied Physics;2007-02
4. Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals;Physica B: Condensed Matter;2006-04
5. Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment;Crystal Research and Technology;2005-04
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