Intrinsic gettering Based on rapid thermal annealing in germanium-doped Czochralski silicon

Author:

Chen Jiahe,Yang Deren,Ma Xiangyang,Li Hong,Que Duanlin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference20 articles.

1. T. Y. Tan, in Defects in Silicon II, edited by W. M. Bullis, U. Gosele, and F. Shimura (The Electrochemical Society, Pennington, NJ, 1991), p. 613.

2. K. Kugimiga, S. Akiyama, and S. Nakamura, in Semiconductor Silicon 1981, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi (The Electrochemical Society, Pennington, NJ, 1981), p. 294.

3. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

4. Gettering mechanisms in silicon

5. The Realization of Uniform and Reliable Intrinsic Gettering in 200mm p- and p/p- Wafers for a Low Thermal Budget 0.18μm Advanced CMOS Logic Process

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