Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals-Reference-Cited by-同舟云学术

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Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals

Published:1985-12-20 Issue:Part 1, No. 12 Volume:24 Page:1594-1599
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimanuki Yasushi,Furuya Hisashi,Suzuki Isamu,Murai Koji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precipitation in Crystalline Solids;Nucleation in Condensed Matter - Applications in Materials and Biology;2010

2. Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals;Physica B: Condensed Matter;2006-04

3. Diffusion–influenced nucleation: a case study of oxygen precipitation in silicon;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2003-01-27

4. Crystal Surface Defects and Oxygen Gettering in Thermally Oxidized Bonded SOI Wafers;Journal of The Electrochemical Society;2001

5. Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers;Journal of Crystal Growth;2000-05

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