Diffusion–influenced nucleation: a case study of oxygen precipitation in silicon
Author:
Affiliation:
1. Department of Physics, CB1105, Washington University, 1 Brookings Drive, St Louis, MO 63130, USA
Publisher
The Royal Society
Subject
General Physics and Astronomy,General Engineering,General Mathematics
Link
https://royalsocietypublishing.org/doi/pdf/10.1098/rsta.2002.1138
Reference46 articles.
1. Oxygen precipitation in silicon
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3. Activation energy for thermal donor formation in silicon
4. Craven R. A. 1981 In Semiconductor silicon (ed. H. R. Hu® & R. J. Kriegler) p. 254. Pennington NJ: The Electrochemical Society.
5. The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon
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