Oxygen defect processes in silicon and silicon germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922251
Reference191 articles.
1. Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry
2. First-principles calculations of the electronic structure and defects of Al2O3
3. A Simulation Study of Oxygen Vacancy-Induced Variability in ${\rm HfO}_{2}$ /Metal Gated SOI FinFET
4. Intrinsic Point Defects and Impurities in Silicon Crystal Growth
5. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
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