InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation-Reference-Cited by-同舟云学术

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InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation

Published:1998-07 Issue:1-4 Volume:2 Page:320-324
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Wagner J.,Schmitz J.,Herres N.,Fuchs F.,Serries D.,Grietens B.,Németh S.,Hoof C.Van,Borghs G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Proposal for strained type II superlattice infrared detectors

2. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb

3. Midwave infrared stimulated emission from a GaInSb/InAs superlattice

4. Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices

5. Compositional dependence of AlAsySb1−yternaries on the ratio of Sb/As fluxes and on the substrate temperature

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices;Surfaces and Interfaces;2024-01

2. Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide;Infrared Physics & Technology;2019-01

3. GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device;Japanese Journal of Applied Physics;2018-07-23

4. Influence of the lattice mismatch on the lattice vibration modes for InAs/GaSb superlattices;Applied Surface Science;2016-01

5. InAs/GaSb superlattice infrared detectors;Infrared Physics & Technology;2015-05

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