GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device-Reference-Cited by-同舟云学术

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GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device

Published:2018-07-23 Issue:8S2 Volume:57 Page:08PD05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arai Masakazu,Takahashi Kakeru,Yamagata Yuya,Inoue Yuki,Wakaki Ryosuke,Maeda Koji

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S2/a=08PD05/pdf

Reference34 articles.

1. The HITRAN 2008 molecular spectroscopic database

2. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe

3. HgCdTe infrared detector material: history, status and outlook

4. Über neue halbleitende Verbindungen

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