Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.15688/fulltext
Reference58 articles.
1. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices
2. Proposal for strained type II superlattice infrared detectors
3. Midwave infrared stimulated emission from a GaInSb/InAs superlattice
4. Effect of interfacial bond type on the electronic and structural properties of GaSb/InAs superlattices
5. Orientation and pressure dependence of the band overlap in InAs/GaSb structures
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