Orientation and pressure dependence of the band overlap in InAs/GaSb structures-Reference-Cited by-同舟云学术

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Orientation and pressure dependence of the band overlap in InAs/GaSb structures

Published:1994-01-01 Issue:1 Volume:9 Page:118-122
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Symons D M,Lakrimi M,Warburton R J,Nicholas R J,Mason N J,Walker P J,Eremets M I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=1/a=021/pdf

Reference21 articles.

1. Band lineups and deformation potentials in the model-solid theory

2. Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs

3. Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells

4. Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wells

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure;Materials Advances;2020

2. Electronic band structure and Shubnikov–de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice;Applied Physics A;2016-01-22

3. Temperature-dependent cyclotron resonance in a hybridized electron–hole system in InAs/GaSb heterostructures;Semiconductor Science and Technology;2007-01-19

4. Antimony-based infrared materials and devices;Thin Films;2001

5. Far-Infrared Spectroscopy of Quasi-2D Impurity States in Semiconductor Nanostructures Under High Hydrostatic Pressure;Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials;2001

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