Scanning capacitance microscopy investigations of focused ion beam damage in silicon-Reference-Cited by-同舟云学术

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Scanning capacitance microscopy investigations of focused ion beam damage in silicon

Published:2003-07 Issue:1-2 Volume:19 Page:178-182
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Brezna W,Wanzenböck H,Lugstein A,Bertagnolli E,Gornik E,Smoliner J

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Focused ion beam technology and applications

2. Limitations of focused ion beam nanomachining

3. Scanning probe microscopy characterisation of masked low energy implanted nanometer structures

4. Scanning capacitance microscopy

5. Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy;Journal of Applied Physics;2018-03-28

2. Realization of large-scale photonic crystal cavity-based devices;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-09-08

3. Evaluating focused ion beam induced damage in soft materials;Micron;2013-07

4. Effect of Molecular Adsorption on the Electrical Conductance of Single Au Nanowires Fabricated by Electron-Beam Lithography and Focused Ion Beam Etching;Small;2010-10-19

5. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

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