Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy-Reference-Cited by-同舟云学术

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Published:2018-03-28 Issue:12 Volume:123 Page:125104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Stumpf F.¹²,Abu Quba A. A.¹,Singer P.³,Rumler M.²³,Cherkashin N.⁴^ORCID,Schamm-Chardon S.⁴^ORCID,Cours R.⁴,Rommel M.¹^ORCID

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen 91058, Germany

2. Erlangen Graduate School in Advanced Optical Technologies (SAOT), Erlangen 91052, Germany

3. Chair of Electron Devices (LEB), University of Erlangen-Nuremberg, Erlangen 91058, Germany

4. CEMES, Université de Toulouse, CNRS, 29 Rue Jeanne Marvig, Toulouse 31055, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022558

Reference33 articles.

1. Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

2. Sub-5nm FIB direct patterning of nanodevices

3. Applications of the FIB lift-out technique for TEM specimen preparation

4. Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

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