Quantification of scanning capacitance microscopy imaging of the pn junction through electrical simulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123278
Reference4 articles.
1. Junction delineation of 0.15 μm MOS devices using scanning capacitance microscopy
2. Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
3. Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon
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