Junction delineation of 0.15 μm MOS devices using scanning capacitance microscopy-Reference-Cited by-同舟云学术

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Junction delineation of 0.15 μm MOS devices using scanning capacitance microscopy

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Kleiman R.N.,O'Malley M.L.,Baumann F.H.,Garno J.P.,Timp G.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650477.pdf?arnumber=650477

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disclosing the carrier distributions in ion-implanted HgCdTe p–n junctions with scanning capacitance microscopy;AIP Advances;2024-04-01

2. Estimating lateral straggling of boron profiles ion implanted into crystalline silicon with a tilt angle of 0/spl deg/ using off-angle substrates;IEEE Transactions on Electron Devices;2006-05

3. Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions;Applied Physics Letters;2002-12-23

4. The vertical replacement-gate (VRG) MOSFET;Solid-State Electronics;2002-07

5. Inverse modeling of sub-100 nm MOSFETs using I-V and C-V;IEEE Transactions on Electron Devices;2002-04

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