Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1532547
Reference9 articles.
1. Model database for determining dopant profiles from scanning capacitance microscope measurements
2. Scanning capacitance microscope methodology for quantitative analysis of p-n junctions
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4. Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
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