Optimization of compositionally graded InxGa1−xP metamorphic buffer layers grown by solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Relaxed InxGa1–xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs;Bulsara;Appl Phys Lett,1998
2. Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition;Lee;Appl Phys Lett,1996
3. Design of InGaAs linear graded buffer structures;Sacedón;Appl Phys Lett,1995
4. Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates;Gozu;J Cryst Growth,1999
5. Material properties of compositional graded InxGa1–xAs and InxAl1–xAs epilayers grown on GaAs substrates;Chyi;J Appl Phys,1996
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1. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor;Technical Physics Letters;2016-03
2. Growth of metamorphic InGaP layers on GaAs substrates;Journal of Crystal Growth;2013-09
3. Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures;Solid-State Electronics;2007-01
4. Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy;Journal of Physics D: Applied Physics;2006-04-20
5. Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing;Applied Physics Letters;2006-03-27
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