Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition

Published:1996-05-20 Issue:21 Volume:68 Page:2973-2975
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee B.,Baek J. H.,Lee J. H.,Choi S. W.,Jung S. D.,Han W. S.,Lee E. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116373

Reference8 articles.

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-06-03

2. Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT;Frontiers in Materials;2022-08-25

3. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials;J INFRARED MILLIM W;2022

4. Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy;Materials Science in Semiconductor Processing;2022-05

5. Reviewing quantum dots for single-photon emission at 1.55 μm: a quantitative comparison of materials;Journal of Physics: Materials;2020-10-01

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