Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing-Reference-Cited by-同舟云学术

Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Published:2006-03-27 Issue:13 Volume:88 Page:132108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ihn Soo-Ghang,Jo Seong June,Song Jong-In

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2189607

Reference12 articles.

1. Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation‐free (<105cm−2) and unstrained epilayers

2. Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases

3. Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates

4. Comparison of In[sub 0.33]Al[sub 0.67]As/In[sub 0.34]Ga[sub 0.66]As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

5. Optimization of compositionally graded InxGa1−xP metamorphic buffer layers grown by solid source molecular beam epitaxy

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