Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures-Reference-Cited by-同舟云学术

Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures

Published:2019-06-21 Issue:7 Volume:34 Page:075025
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Golovynskyi S^ORCID,Datsenko O I^ORCID,Seravalli L^ORCID,Kondratenko S V,Kulinichenko O,Trevisi G^ORCID,Frigeri P^ORCID,Gombia E,Golovynska I^ORCID,Li Baikui,Qu Junle^ORCID

Funder

National Natural Science Foundation of China

COST Action ‘Nanoscale Quantum Optics’ of European Union

Project of Department of Education of Guangdong Province

Guangdong Natural Science Foundation Innovation Team

Shenzhen Science and Technology Innovation Commission

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab02a1/pdf

Reference64 articles.

1. Optical properties of InAs/GaAs quantum dot superlattice structures

2. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

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