Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement-Reference-Cited by-同舟云学术

Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement

Published:2020-08-11 Issue:9 Volume:35 Page:095022
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Golovynskyi Sergii^ORCID,Datsenko Oleksandr I^ORCID,Seravalli Luca^ORCID,Kondratenko Serhiy V^ORCID,Trevisi Giovanna^ORCID,Frigeri Paola^ORCID,Li Baikui^ORCID,Qu Junle^ORCID

Funder

Ministry of Education and Science of Ukraine

Shenzhen University Scientific Research Start-up Foundation

Shenzhen Science and Technology Innovation Commission under Grant

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ab9db4/pdf

Reference43 articles.

1. Semiconductor nanostructures for flying q-bits and green photonics

2. A monolithically integrated plasmonic infrared quantum dot camera

3. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

4. Photovoltaic Performance of Pin Junction Nanocone Array Solar Cells with Enhanced Effective Optical Absorption

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