Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructures
2. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures
3. Achievement of exceptionally high mobilities in modulation-doped Ga1−xInxAs on InP using a stress compensated structure
4. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
5. High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation;IEEE Transactions on Electron Devices;2023-05
2. Recent Progress on Piezotronic and Piezo-Phototronic Effects in III-Group Nitride Devices and Applications;Advanced Engineering Materials;2017-12-06
3. Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs;Materials Research Express;2017-10-20
4. Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2016-03
5. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3