Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation-Reference-Cited by-同舟云学术

Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation

Published:2023-05 Issue:5 Volume:70 Page:2431-2436
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cha Eunjung¹^ORCID,Wadefalk Niklas²^ORCID,Moschetti Giuseppe³^ORCID,Pourkabirian Arsalan²,Stenarson Jörgen²^ORCID,Li Junjie¹^ORCID,Kim Dae-Hyun⁴^ORCID,Grahn Jan¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden

2. Low Noise Factory AB, Gothenburg, Sweden

3. Qamcom Research and Technology AB, Gothenburg, Sweden

4. School of Electronics Engineering, Kyungpook National University, Daegu, South Korea

Funder

Swedish Governmental Agency of Innovation System (Vinnova), carried out in the GigaHertz Centre

Chalmers Tekniska Högskola

Low Noise Factory AB

Omnisys Instruments

Virginia Diodes

Wasa Millimeter Wave

RISE Research Institutes of Sweden

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10070577.pdf?arnumber=10070577

Reference17 articles.

1. Ultra-Wideband Chip Attenuator for Precise Noise Measurements at Cryogenic Temperatures

2. fT = 688 GHz and fmax = 800 GHz in Lg + 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/?m;kim;IEDM Tech Dig,2011

3. Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs

4. Phonon black-body radiation limit for heat dissipation in electronics

5. TFET-Based Circuit Design Using the Transconductance Generation Efficiency $ {g}_{m}/ {I}_{d}$ Method

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1. A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2024-06

2. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05

3. Composite channel 100 nm InP HEMT with ultrathin barrier for millimetre wave applications;Engineering Research Express;2024-03-01

4. Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content;IEEE Journal of the Electron Devices Society;2024

5. Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs;2023 International Electron Devices Meeting (IEDM);2023-12-09