Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
Author:
Affiliation:
1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
2. Low Noise Factory AB, Gothenburg, Sweden
Funder
Swedish Research Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/6245494/10416702/10454583.pdf?arnumber=10454583
Reference30 articles.
1. Microwaves in Quantum Computing
2. Cryogenic Control Architecture for Large-Scale Quantum Computing
3. Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
4. A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation
5. Optimal noise figure of microwave GaAs MESFET's
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