A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation
Author:
Affiliation:
1. Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Freiburg im Breisgau, Germany
Funder
European Union’s Horizon 2020 Research and Innovation Programme through the RadioNet and SEQUENCE Projects
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9507731/09459460.pdf?arnumber=9459460
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05
2. A 0.32×0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout;IEEE Transactions on Microwave Theory and Techniques;2024-04
3. Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content;IEEE Journal of the Electron Devices Society;2024
4. Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts;2023 International Electron Devices Meeting (IEDM);2023-12-09
5. Fabrication and Characterization of High Indium In0.7Ga0.3As Channel MHEMT on GaAs Substrate;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10
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