Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells-Reference-Cited by-同舟云学术

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Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells

Published:2003-02 Issue:3 Volume:97 Page:211-216
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Yu Yongqin,Zhang Xiaoyang,Huang Baibiao,Wang Duxiang,Wei Jiyong,Zhou Hailong,Pan Jiaoqing,Qi Yun,Chen Wenlan,Qin Xiaoyan,Ren Zhongxiang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Reduction of lasing threshold current density by the lowering of valence band effective mass

2. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers

3. Growth and characterization of strain-compensated and multiple quantum wells

4. MOVPE growth of strain-compensated 1300 nm In1−Ga As P1− quantum well structures

5. Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers

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2. FeNi-based bimetallic MIL-101 directly applicable as an efficient electrocatalyst for oxygen evolution reaction;Microporous and Mesoporous Materials;2019-09

3. Effect of n-Type AlGaAs Layer on Efficiency of Reflective 590-nm AlGaInP Light Emitting Diodes;ECS Journal of Solid State Science and Technology;2015

4. Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses;International Journal of Photoenergy;2015

5. Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD;Journal of Crystal Growth;2004-06

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