Growth and characterization of strain-compensated and multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
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2. Dislocations in strained-layer epitaxy: theory, experiment, and applications;Fitzgerald;Mater. Sci. Reports,1991
3. Investigations of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells;Tsuchiya;J. Crystal Growth,1994
4. Strain compensation on crystalline quality for InGaAsInAlP strained multiple quantum well structures on InP grown by gas-source molecular beam epitaxy;Naniwae;Jpn. J. Appl. Physics,1994
5. Improvement of crystal quality and laser characteristics by zero net strain structure;Takiguchi;J. Crystal Growth,1994
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1. Development of strain compensated InGaAs/InGaP multiple quantum wells in the 1.05–1.50 eV energy range for multijunction solar cells;Micro and Nanostructures;2023-08
2. STRUCTURAL, ELECTRONIC, THERMODYNAMIC AND THERMAL PROPERTIES OF ZINC-BLENDE InP, InAs AND THEIR InAsx P1-x TERNARY ALLOYS VIA FIRST PRINCIPLES CALCULATIONS;International Journal of Modern Physics B;2013-10-15
3. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05
4. Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells;Materials Science and Engineering: B;2003-02
5. Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers;Optical and Quantum Electronics;2001
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