Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Electrical doping of HgCdTe by ion implantation and heat treatment
2. Defects, diffusion and activation in ion implanted HgCdTe
3. Electrical properties of donor and acceptor implanted Hg1−xCdxTe following cw CO2laser annealing
4. Native oxide encapsulation for annealing boron‐implanted Hg1−xCdxTe
5. 11B+ implantation and postimplant anneal studies in Hg1−x CdxTe
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1. Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions;Russian Physics Journal;2018-10
2. Annealing kinetics of radiation defects in boron-implanted p-Hg1−xCdxTe;Semiconductor Science and Technology;2018-05-16
3. Design Methods for HgCdTe Infrared Detectors;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016
4. Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1–x Te Heteroepitaxial Layers;Russian Physics Journal;2013-11-06
5. The effect of boron implantation modes on the parameters of photodiodes produced in the Cd x Hg1-x Te heteroepitaxial structures;Russian Physics Journal;2013-09-13
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