Native oxide encapsulation for annealing boron‐implanted Hg1−xCdxTe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97117
Reference7 articles.
1. Ion Implantation Study of HgCdTe
2. Behavior of implantation‐induced defects in HgCdTe
3. Summary Abstract: Composition study of photochemically grown oxides of Hg1−xCdxTe
4. Thermal pulse annealing of boron‐implanted HgCdTe
5. Ion implantation in Hg1−xCdxTe
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1. Doping effect of boron in Hg0.75Cd0.25Te: first-principles study;Acta Physica Sinica;2012
2. Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide;Materials Science and Engineering: B;1997-02
3. Passivation of Hg1-xCdxTe by photochemical native oxidation: Quantitative analysis of oxide composition;Journal of Electronic Materials;1995-08
4. Electrical activation of B implants in Hg0.79Cd0.21Te by immersion annealing in a hot Hg bath;Applied Physics Letters;1989-09-11
5. Electron-beam stimulated oxidation of Hg0.8Cd0.2Te surfaces;Surface Science;1989-04
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