Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1–x Te Heteroepitaxial Layers-Reference-Cited by-同舟云学术

Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd x Hg1–x Te Heteroepitaxial Layers

Published:2013-11-06 Issue:7 Volume:56 Page:763-777
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Voitsekhovskii A. V.,Talipov N. Kh.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-013-0098-1.pdf

Reference24 articles.

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2. A. L. Aseev, ed., Photodetector Devices Based on the Epitaxial System Cadmium–Mercury–Tellurium [in Russian], Publishing House of th Siberian Branch of the Russian Academy of Sciences, Novosibirsk (2012).

3. A. Rogalski, Infrared Detectors, Second Edition, CRC Press, Boca Raton, FL (2010).

4. Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, and N. N. Mikhailov, Photodetector Array Devices in the Infrared [in Russian], S. P. Sinitsa, ed., Nauka, Novosibirsk (2001).

5. I. A. Denisov, Development of a Technology for Growing Cadmium–Mercury–Tellurium Epitaxial Layers by the Method of Liquid-Phase Epitaxy for Infrared Photodetctors [in Russian], Cand. Tech. Science Dissert., Moscow (2007).

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3. Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers;Russian Physics Journal;2014-07