Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers-Reference-Cited by-同舟云学术

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Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers

Published:2014-07 Issue:3 Volume:57 Page:345-358
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Talipov N. Kh.,Voitsekhovskii А. V.,Grigor’ev D. V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-014-0246-2.pdf

Reference35 articles.

1. Photodetectors based on the Cadmium–Mercury–Tellurium Epitaxial System [in Russian], Izd. SO RAN, Novosibirsk (2012).

2. A. Rogal’skii, Infrared Detectors [Russian translation], Nauka, Novosibirsk (2003).

3. V. I. Stafeev, K. O. Boltar’, I. D. Burlakov, et al., Fiz. Tekh. Poluprovodn., 39, No. 10, 1257– 1265 (2005).

4. V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Matrix Infrared Photodetectors, Ch. 3 [in Russian], Nauka, Novosibirsk (2001).

5. V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Matrix Infrared Photodetectors, Ch. 2 [in Russian], Nauka, Novosibirsk (2001).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of composition of Hg1−x Cd x Te (x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation;Materials Research Express;2019-04-17

2. Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions;Russian Physics Journal;2018-10

3. Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates;Infrared Physics & Technology;2017-03

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