Electrical properties of donor and acceptor implanted Hg1−xCdxTe following cw CO2laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93392
Reference8 articles.
1. Properties of ion-implanted junctions in mercury—cadmium—telluride
2. Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te
3. Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors
4. cw CO2and ruby laser annealing of ion‐implanted Hg1−xCdxTe
5. Two‐electron conduction inN‐type Hg1−xCdxTe
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1. Doping effect of boron in Hg0.75Cd0.25Te: first-principles study;Acta Physica Sinica;2012
2. Summary of HgCdTe 2D array technology in the U.K.;Journal of Electronic Materials;2001-06
3. Percolation problem in boron—Implanted mercury cadmium telluride;Journal of Electronic Materials;2000-06
4. Percolation problem in atomic transport inHg1−xCdxTe;Physical Review B;1999-12-15
5. Analysis of the ideality factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region;Semiconductor Science and Technology;1997-04-01
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