Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure-Reference-Cited by-同舟云学术

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Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Published:2021-10 Issue: Volume:29 Page:104768
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Wu Hao,Fu Xiaojun,Wang Yuan,Guo Jingwei,Shen Jingyu,Hu Shengdong

Funder

Fundamental Research Funds for the Central Universities

Natural Science Foundation Project of Chongqing, Chongqing Science and Technology Commission

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference32 articles.

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,1999

2. Circuit design techniques for reducing the effects of magnetic flux on GaN-HEMTs in 5-MHz 100-W high power-density LLC resonant DC-DC converters;Hariya;IEEE Trans. Power Electron.,2017

3. A. Aminbeidokhti et al., “The power law of phonon-limited electron mobility in the 2-D electron gas of AlGaN/GaN heterostructure,” IEEE Trans. Electron Devices, vol. 63, no. 5, pp. 2214-2218, May. 2016, doi: 10.1109/TPEL.2016.2544920.

4. Ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for manufacturing high-performance GaN-on-Si power devices;Huang;IEEE Trans. Electron Devices,2018

5. Z. Wang et al., “Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height,” Chin. Phys. B, vol. 29, no. 2, pp. 027301-1-5, Dec. 2019, doi: 10.1088/1674-1056/ab5fb9.

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1. Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study;Results in Physics;2024-09

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3. Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates;Advances in Materials Science;2024-03-01

4. Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices;physica status solidi (a);2023-07-06

5. Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer;Journal of Computational Electronics;2023-06-05

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