Circuit Design Techniques for Reducing the Effects of Magnetic Flux on GaN-HEMTs in 5-MHz 100-W High Power-Density LLC Resonant DC

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Circuit Design Techniques for Reducing the Effects of Magnetic Flux on GaN-HEMTs in 5-MHz 100-W High Power-Density LLC Resonant DC–DC Converters

Published:2017-08 Issue:8 Volume:32 Page:5953-5963
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Hariya Akinori,Koga Tomoya,Matsuura Ken,Yanagi Hiroshige,Tomioka Satoshi,Ishizuka Yoichi,Ninomiya Tamotsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/7886374/07588069.pdf?arnumber=7588069

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