Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate-Reference-Cited by-同舟云学术

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Different reverse leakage current transport mechanisms of planar Schottky barrier diodes(SBDs) on sapphire and GaN substrate

Published:2023-10 Issue: Volume:53 Page:106933
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Wang Xiao^ORCID,Lind Zhi-Yu,Zhang Yu-Min,Wang Jian-Feng,Xu Ke

Funder

National Natural Science Foundation of China

National Natural Science Foundation of China-Yunnan Joint Fund

Suzhou Institute of Nano-tech and Nano-bionics

National Key Research and Development Program of China

Science and Technology Program of Suzhou

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference31 articles.

1. DFT Investigations of the Optical Properties of Gallium Arsenide

2. Effects of vacancies on electronic and optical properties of GaN nanosheet: A density functional study

3. Joubert D. Phys Rev B Condens Matter Mater Phys 1999;59:1758. [4] Yang M, Chang B, Hao G, Wang H, Wang M. Optik 2015;126:3357–61.

4. Twodimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures;Ambacher;J Appl Phys,1999

5. Circuit design techniques for reducing the effects of magnetic flux on GaN-HEMTs in 5- MHz 100-W high power-density LLC resonant DC-DC converters;Hariya;IEEE Trans Power Electron,2017

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