Investigation and modeling of impact ionization in HEMTs for DC and RF operating conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMT's within the range of 400 GHz cutoff frequency;Yamashita;IEEE Electron. Dev. Lett,2001
2. Monte Carlo study of the dynamic breakdown effects in HEMT's;Di Carlo;IEEE Electron. Dev. Lett.,2000
3. On-state breakdown in power HEMT's: measurement and modeling;Somerville;IEEE Trans. Electron. Dev.,1999
4. On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness;Meneghesso;IEEE Trans. Electron. Dev.,1999
5. Phonon-assisted impact ionization of electrons in In0.53Ga0.47As;Isler;Phys. Rev. B,2001
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1. An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect;Chinese Physics B;2017-05
2. Improved modeling on the RF behavior of InAs/AlSb HEMTs;Solid-State Electronics;2015-12
3. Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors;Journal of Applied Physics;2015-11-21
4. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications;The Scientific World Journal;2014
5. Simulation Study of Low Dimensional Effects in Pitch-Scaled (90 nm Technology Node) High Electron Mobility Transistors for Very Large Scale Integration Applications;Journal of Nanoelectronics and Optoelectronics;2013-02-01
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