Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935542
Reference18 articles.
1. Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's
2. InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers
3. Phonon-assisted impact ionization of electrons inIn0.53Ga0.47As
4. Gate-Recess Technology for InAs/AlSb HEMTs
5. Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications
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1. Effect of annealing temperature on interfacial and electrical performance of Au–Pt–Ti/HfAlO/InAlAs metal–oxide–semiconductor capacitor;Chinese Physics B;2020-08-01
2. A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-03-26
3. Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier;Coatings;2019-05-13
4. An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect;Chinese Physics B;2017-05
5. Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures;Thin Solid Films;2016-11
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