Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications-Reference-Cited by-同舟云学术

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Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

Published:2012-03 Issue:3 Volume:22 Page:144-146
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Moschetti G.,Wadefalk N.,Nilsson P.-Å.,Abbasi M.,Desplanque L.,Wallart X.,Grahn J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/6166715/06157651.pdf?arnumber=6157651

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation;2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA);2023-09-29

2. Ultra Low Power-Low Noise GNRFET Wideband Amplifier for Cryogenic Applications;NAECON 2023 - IEEE National Aerospace and Electronics Conference;2023-08-28

3. C-Band Low-Noise Amplifier MMIC with an Average Noise Temperature of 44.5 K and 24.8 mW Power Consumption;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03

4. Wideband cryogenic amplifier for a superconducting nanowire single-photon detector;Frontiers of Information Technology & Electronic Engineering;2021-12

5. Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al2O3;Vacuum;2021-11

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