An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect-Reference-Cited by-同舟云学术

An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect

Published:2017-05 Issue:5 Volume:26 Page:058501
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Guan He,Guo Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/26/5/058501/pdf

Reference23 articles.

1. Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications

2. InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation

3. Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

4. Impact-Ionization Effects on the High-Frequency Behavior of HFETs

5. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

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